Zinc Oxide Nanorods Grown on Printed Circuit Board for Extended-Gate Field-Effect Transistor pH Sensor
ISSN
3615235
Năm xuất bản
2017
Tác giả
Van Thanh P.
Faculty of Physics, VNU University of Science, 334 Nguyen Trai, Hanoi, Viet Nam
Nhu L.T.Q.
Tuyen N.V.
Kien D.T.
DOI
10.1007/s11664-017-5369-0
Tóm tắt
Zinc oxide (ZnO) nanorods (NRs) were grown directly on printed circuit boards with a 35-μm-thick copper layer using a seedless galvanic-cell hydrothermal process. The hexagonal structure of the synthesized ZnO NRs was observed by scanning electron microscopy. The microstructural characteristics of the as-grown ZnO NRs were investigated by x-ray diffraction analysis, revealing preferred (002) growth direction. Raman and photoluminescence spectra confirmed the high crystalline quality of the ZnO NRs. As-grown ZnO NRs were then grown for 7 h using the galvanic effect for use as the pH membrane of an extended-gate field-effect transistor pH sensor (pH-EGFET). The current–voltage characteristics showed sensitivity of 15.4 mV/pH and 0.26 (μA)1/2/pH in the linear and saturated region, respectively. Due to their cost effectiveness, low-temperature processing, and ease of fabrication, such devices are potential candidates for use as flexible, low-cost, disposable biosensors. © 2017, The Minerals, Metals & Materials Society.
