Carrier transport study on triphenylamine-thienothiophene-based hole transport material by MIS-CELIV method

Kim W.; Nishikawa Y.; Bui T.-T.; Goubard F.; Dao Q.-D.; Fujii A.; Ozaki M.

doi:10.7567/1347-4065/ab656b

Carrier transport study on triphenylamine-thienothiophene-based hole transport material by MIS-CELIV method

ISSN

214922

Năm xuất bản

2020

Tác giả

Kim W.

Division of Electrical Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Osaka, Suita, 565-0871, Japan

Nishikawa Y.

Laboratoire de Physicochimie des Polym res et des Interfaces, Université de Cergy-Pontoise, 5 mail Gay Lussac, Neuville-sur-Oise, 95000, France

Bui T.-T.

Faculty of Physics, VNU-University of Science, Thanhxuan, Hanoi, 120-034, Viet Nam

Goubard F.

Dao Q.-D.

Fujii A.

Ozaki M.

DOI

10.7567/1347-4065/ab656b

Tóm tắt

Charge carrier mobility measurement of a promising hole transport material, 4,4′-(thieno[3,2-b]thiophene-2,5-diyl)bis(N,N-bis(4-methoxyphenyl)aniline) (TT-2,5-TPA), with a p-dopant, lithium bis(trifluoromethanesulfonyl)imide (LiTFSI) at various doping concentration, was carried out by utilizing metal-insulator-semiconductor charge extraction by the linearly increasing voltage (MIS-CELIV) method. Doping concentration dependence and temperature dependence of the hole mobility in TT-2,5-TPA thin films with LiTFSI were investigated in the MIS-CELIV measurement, and the enhancement of hole mobility and suppression of activation energy were discussed by taking the thermal activated hopping process into consideration. © 2020 The Japan Society of Applied Physics.